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| geometry process details process cpd05 general purpose rectifier 1 amp glass passivated rectifier chip process glass passivated mesa die size 51 x 51 mils die thickness 10.2 mils anode bonding pad area 36 x 36 mils top side metalization ni/au - 5,000?/2,000? back side metalization ni/au - 5,000?/2,000? principal device types 1n3611 thru 1n3614 1n4001 thru 1n4007 1n4245 thru 1n4249 1n5059 thru 1n5062 1n5391 thru 1n5399 1n5614 thru 1n5622 cmr1-02 series cmr1-02m series gross die per 4 inch wafer 4,250 www.centralsemi.com r4 (22-march 2010)
process cpd05 typical electrical characteristics www.centralsemi.com r4 (22-march 2010) |
Price & Availability of CPD0510
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